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PDF R6006AND Data sheet ( Hoja de datos )
| Número de pieza | R6006AND | |
| Descripción | Nch 600V 6A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R6006AND
Nch 600V 6A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
1.2W
6A
40W
lOutline
CPT3
(SC-63)
(SOT-428)
(1) (2)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
5) Parallel use is easy.
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
16
2,500
TL
Marking
R6006A
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
6
2.9
24
30
2.4
1.9
3
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.04 - Rev.B
1 page  
R6006AND
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
PW = 100ms
10
1
PW = 1ms
0.1
0.01
Operation in this
area is limited
by RDS(on)
Ta=25ºC
Single Pulse
PW = 10ms
0.001
0.1 1 10 100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 100ºC/W
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 10 100 1000
Pulse Width : PW [s]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/13
2013.04 - Rev.B
5 Page 
R6006AND
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
VGS=0V
Pulsed
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
0.1 Ta= -25ºC
0.01
0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
10
0.1
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
Pulsed
1 10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.04 - Rev.B
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R6006AND.PDF ] | |
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