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ROHM Semiconductor |
R5207AND
Nch 525V 7A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
525V
1.0Ω
±7A
40W
lOutline
CPT3
SC-63
TO-252
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
R5207A
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
525
±7
±3.4
±28
±30
3.2
2.5
3.5
40
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
℃
℃
Reverse diode dv/dt
dv/dt 15 V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.001
R5207AND
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
dv/dt
Conditions
VDS = 400V, ID = 7A
Tj = 125℃
Values Unit
50 V/ns
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 3.13 ℃/W
- - 100 ℃/W
- - 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DSS VGS = 0V, ID = 1mA
V(BR)DS VGS = 0V, ID = 3.5A
VDS = 525V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 3.5A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
525 - - V
- 580 -
V
- 0.1 100 μA
- - 1000
- - ±100 nA
2.5 - 4.5 V
- 0.78 1.0 Ω
- 1.7 -
- 9 -Ω
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
20150730 - Rev.001
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