파트넘버.co.kr R5207AND 데이터시트 PDF


R5207AND 반도체 회로 부품 판매점

Nch 525V 7A Power MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
R5207AND 데이터시트, 핀배열, 회로
R5207AND
  Nch 525V 7A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
525V
1.0Ω
±7A
40W
lOutline
CPT3
SC-63
TO-252
      
      
 
 
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
  to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
R5207A
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
525
±7
±3.4
±28
±30
3.2
2.5
3.5
40
150
-55 to +150
V
A
A
A
V
mJ
mJ
A
W
Reverse diode dv/dt
dv/dt 15 V/ns
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
20150730 - Rev.001    


R5207AND 데이터시트, 핀배열, 회로
R5207AND
          
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
Symbol
dv/dt
Conditions
VDS = 400V, ID = 7A
Tj = 125
Values Unit
50 V/ns
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 3.13 /W
- - 100 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DSS VGS = 0V, ID = 1mA
V(BR)DS VGS = 0V, ID = 3.5A
VDS = 525V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 3.5A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
525 - - V
- 580 -
V
   
- 0.1 100 μA
- - 1000
- - ±100 nA
2.5 - 4.5 V
   
- 0.78 1.0 Ω
- 1.7 -
- 9 -Ω
                                                                                         
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/13
20150730 - Rev.001




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R5207AND mosfet

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R5207AND

Nch 525V 7A Power MOSFET - ROHM Semiconductor