파트넘버.co.kr RQ1C065UN 데이터시트 PDF


RQ1C065UN 반도체 회로 부품 판매점

Nch 20V 6.5A Middle Power MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
RQ1C065UN 데이터시트, 핀배열, 회로
RQ1C065UN
  Nch 20V 6.5A Middle Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
20V
22mΩ
±6.5A
1.5W
lFeatures
1) Low on - resistance.
2) 1.5V Drive
3) Built-in G-S protection diode.
4) Small surface mount package(TSMT8).
5) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
      
lInner circuit
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
VB
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
20 V
Continuous drain current
ID ±6.5 A
Pulsed drain current
ID,pulse*1
±26
A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.5 W
PD*3 0.7 W
Junction temperature
Tj 150
Range of storage temperature
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001    


RQ1C065UN 데이터시트, 핀배열, 회로
RQ1C065UN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 83.3
- - 178
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
IDSS VDS = 20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
VGS = 4.5V, ID = 6.5A
Static drain - source
on - state resistance
RDS(on)*4 VGS = 2.5V, ID = 6.5A
VGS = 1.8V, ID = 3.2A
VGS = 1.5V, ID = 1.3A
Gate input resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 6.5A
Values
Unit
Min. Typ. Max.
20 - - V
- 29 - mV/
- - 1 μA
- - ±10 μA
0.3 - 1.0 V
- -1.6 - mV/
- 16 22
- 19 27
- 24 32
- 29 58
- 2-Ω
6 - -S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20150730 - Rev.001




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RQ1C065UN mosfet

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RQ1C065UN

Nch 20V 6.5A Middle Power MOSFET - ROHM Semiconductor