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ROHM Semiconductor |
RQ1C065UN
Nch 20V 6.5A Middle Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
20V
22mΩ
±6.5A
1.5W
lFeatures
1) Low on - resistance.
2) 1.5V Drive
3) Built-in G-S protection diode.
4) Small surface mount package(TSMT8).
5) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
lAbsolute maximum ratings (Ta = 25°C)
Marking
VB
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
20 V
Continuous drain current
ID ±6.5 A
Pulsed drain current
ID,pulse*1
±26
A
Gate - Source voltage
VGSS
±10 V
Power dissipation
PD*2 1.5 W
PD*3 0.7 W
Junction temperature
Tj 150 ℃
Range of storage temperature
Tstg
-55 to +150
℃
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.001
RQ1C065UN
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 83.3
- - 178
Unit
℃/W
℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
IDSS VDS = 20V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
VGS = 4.5V, ID = 6.5A
Static drain - source
on - state resistance
RDS(on)*4 VGS = 2.5V, ID = 6.5A
VGS = 1.8V, ID = 3.2A
VGS = 1.5V, ID = 1.3A
Gate input resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 6.5A
Values
Unit
Min. Typ. Max.
20 - - V
- 29 - mV/℃
- - 1 μA
- - ±10 μA
0.3 - 1.0 V
- -1.6 - mV/℃
- 16 22
- 19 27
mΩ
- 24 32
- 29 58
- 2-Ω
6 - -S
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150730 - Rev.001
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