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ROHM Semiconductor |
1.5V Drive Pch MOSFET
RZL035P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL035P01
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−12
±10
±3.5
±14
−0.8
−14
1.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth (ch-a) ∗
Limits
125
Unit
°C / W
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YB
zInner circuit
(6) (5)
(4)
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
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○c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A
RZL035P01
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)∗
−
−
−
26 36 mΩ ID= −3.5A, VGS= −4.5V
36 50 mΩ ID= −1.7A, VGS= −2.5V
46 69 mΩ ID= −1.7A, VGS= −1.8V
Forward transfer admittance
− 66 132 mΩ ID= −0.7A, VGS= −1.5V
Yfs ∗ 5.5
−
−
S VDS= −6V, ID= −3.5A
Input capacitance
Ciss
− 1940 −
pF VDS= −6V
Output capacitance
Coss − 260 − pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on) ∗
tr ∗
td (off) ∗
tf ∗
Qg ∗
Qgs ∗
Qgd ∗
−
−
−
−
−
−
−
−
240 −
10 −
50 −
350 −
180 −
20 −
3.5 −
3.0 −
pF f=1MHz
ns VDD −6V
ns ID= −1.7A
VGS= −4.5V
ns RL 3.5Ω
ns RG=10Ω
nC VDD −6V, ID= −3.5A
nC VGS= −4.5V
nC RL 1.7Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD ∗ −
− −1.2 V
∗ Pulsed
Conditions
IS= −3.5A, VGS=0V
Data Sheet
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A
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