|
ON Semiconductor |
NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low RDS(on) in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• Pb−Free Package is Available
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
N−Ch TA = 25°C
Steady
State TA = 85°C
tv5
P−Ch
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Pulsed Drain Current
(Note 1)
tv5
N−Ch
P−Ch
TA = 25°C
t = 10 ms
t = 10 ms
VDSS
VGS
ID
ID
IDM
20
±12
2.9
2.1
3.9
−2.2
−1.6
−3.0
12
−9.0
V
V
A
A
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.1 W
tv5
Operating Junction and Storage
Temperature
TA = 25°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TJ,
TSTG
TL
2.1
−55 to
150
260
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
ID MAX
3.9 A
−3.0 A
D1 S2
G1 G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C1 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHC5513T1 ChipFET 3000/Tape & Reel
NTHC5513T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
Publication Order Number:
NTHC5513/D
NTHC5513
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Junction−to−Ambient (Note 1)
Steady State
tv5
TA = 25°C
RqJA
110
60
2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
OFF CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
IDSS
IGSS
N
P
N
P
N
P
VGS = 0 V
ID = 250 mA
ID = −250 mA
VGS = 0 V, VDS = 16 V
VGS = 0 V, VDS = −16 V
VGS = 0 V, VDS = 16 V, TJ = 85 °C
VGS = 0 V, VDS = −16 V, TJ = 85 °C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
N
P
N
P
N
P
N
P
VGS = VDS
ID = 250 mA
ID = −250 mA
VGS = 4.5 V , ID = 2.9 A
VGS = −4.5 V , ID = −2.2 A
VGS = 2.5 V , ID = 2.3 A
VGS = −2.5 V, ID = −1.7 A
VDS = 10 V, ID = 2.9A
VDS = −10 V , ID = −2.2 A
Input Capacitance
CISS
N
P
Output Capacitance
COSS
N
P
Reverse Transfer Capacitance
CRSS
N
P
Total Gate Charge
QG(TOT)
N
P
Gate−to−Source Gate Charge
QGS
N
P
Gate−to−Drain “Miller” Charge
QGD
N
P
3. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
VDS = 10 V
VDS = −10 V
f = 1 MHz, VGS = 0 V
VDS = 10 V
VDS = −10 V
VDS = 10 V
VDS = −10 V
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
VGS = 4.5 V, VDS = 10 V, ID = 2.9 A
VGS = −4.5 V, VDS = −10 V, ID = −2.2 A
Min Typ Max Unit
20 V
−20
1.0 mA
−1.0
5
−5
±100 nA
0.6 1.2
−0.6 −1.2
0.058 0.080
0.130 0.155
0.077 0.115
0.200 0.240
6.0
6.0
V
W
S
180 pF
185
80
95
25
30
2.6 4.0 nC
3.0 6.0
0.6
0.5
0.7
0.9
http://onsemi.com
2
|