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PDF NTMD6601NR2G Data sheet ( Hoja de datos )
| Número de pieza | NTMD6601NR2G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMD6601NR2G
Power MOSFET
80 V, 2.2 A, Dual N-Channel, SO-8
Features
•ăLow RDS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăDual SO-8 Surface Mount Package Saves Board Space
•ăThis is a Pb-Free Device
Applications
•ăLCD Displays
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJA t < 5 s
(Note 1)
TA = 25°C
TA = 70°C
TA = 25°C
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 25°C
TA = 70°C
VDSS
VGS
ID
PD
ID
PD
ID
80
±15
1.4
1.2
1.0
1.1
0.9
0.6
2.2
1.7
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
9.0
-55 to
+150
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche
Energy TJ = 25C, VDD = 50 V, VGS = 10 V,
IL = 7.0 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
EAS
1.3
25
TL 260
Unit
V
V
A
W
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Rating
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
120
Junction-to-Ambient – t≤ 5 s (Note 1)
Junction-to-FOOT (Drain)
RqJA
RqJF
48
°C/W
40
Junction-to-Ambient – Steady State (Note 2)
RqJA
200
1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
80 V
RDS(on) Max
215 mW @ 10 V
245 mW @ 4.5 V
ID Max
2.2 A
N-Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
8
1
SO-8
CASE 751
STYLE 11
D1 D1 D2 D2
8
6601N
AYWW
G
1
S1 G1 S2 G2
6601N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTMD6601NR2G SO-8 2500/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 0
1
Publication Order Number:
NTMD6601N/D
1 page  
NTMD6601NR2G
TYPICAL ELECTRICAL CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
1.0E-05
SINGLE PULSE
1.0E-04
Normalized to qja at 10s.
Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient
1.0E-03
1.0E-02
1.0E-01
t, TIME (s)
1.0E+00
Figure 13. Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NTMD6601NR2G.PDF ] | |
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