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PDF IXBT6N170 Data sheet ( Hoja de datos )
| Número de pieza | IXBT6N170 | |
| Descripción | BIMOSFET Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS | |
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH6N170
IXBT6N170
VCES =
IC90 =
VCE(sat) ≤
1700V
6A
3.4V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 24Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1700
1700
V
V
± 20
± 30
V
V
12 A
6A
36 A
ICM = 16
VCES ≤ 1350
75
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
IC = 250μA, VCE = VGE
VGE(th)
sICES
IGES
VCE(sat)
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC = 6A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5 5.5 V
10 μA
100 μA
±100 nA
2.84 3.40
3.46
V
V
TO-247 (IXBH)
G
CE
TO-268 (IXBT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z High blocking voltage
z Integrated Anti-parallel diode
z International standard packages
z Low conduction losses
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS99004C(10/08)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
280
RG = 24Ω
240 VGE = 15V
VCE = 850V
200
160 I C = 12A
120
80
I C = 6A
40
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
700
600 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
500 VCE = 850V
90
80
70
400
300 I C = 12A, 6A
60
50
200 40
100 30
0 20
0 30 60 90 120 150 180 210 240 270 300
RG - Ohms
1200
1100
1000
900
800
700
600
500
400
300
200
3
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 10Ω, VGE = 15V
VCE = 850V
150
140
130
120
110
100
90
TJ = 125ºC, 25ºC
80
70
60
50
4 5 6 7 8 9 10 11 12
IC - Amperes
IXBH6N170
IXBT6N170
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
280
240
RG = 24Ω
VGE = 15V
VCE = 850V
200
160
120 TJ = 125ºC
80
40 TJ = 25ºC
0
3 4 5 6 7 8 9 10 11 12
IC - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
900 130
t f td(off) - - - -
800
RG = 10Ω, VGE = 15V
VCE = 850V
120
700 110
I C = 6A
600
100
500 90
400
I C = 12A
80
300 70
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1100
1000
900
800
700
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 850V
I C = 6A
800
700
600
500
400
600 I C = 12A 300
500 200
400 100
300
0
0
30 60 90 120 150 180 210 240 270 300
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_6N170(2N)10-09-08
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBT6N170.PDF ] | |
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