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PDF AO3702 Data sheet ( Hoja de datos )
| Número de pieza | AO3702 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide
excellent RDS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
-AO3702L is Halogen Free
Features
VDS (V) = 20V
ID = 3.5A (VGS = 4.5V)
RDS(ON) < 62mΩ (VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
SCHOTTKY
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
20
±8
3.5
2.7
25
1.15
0.7
-55 to 150
Typ
80.3
117
43
153
173
103
Schottky
20
1
0.5
10
0.66
0.42
-55 to 150
Max
110
150
80
190
220
140
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (Volts)
Figure 12: Schottky Forward Characteristics
200
f=1MHz
160
120
80
40
0
0 5 10 15 20
VKA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5 1.0E-02
0.4
IF=1A
1.0E-03
0.3 VR=20V
IF=0.5A
0.2
1.0E-04
VR=16V
0.1
0
25 50 75 100 125
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
150
1.0E-05
0
25 50 75 100 125 150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10.000
1.000
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=220°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.100
0.010
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Schottky Normalized Maximum Transient Thermal Impedance
1000
10000
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO3702.PDF ] | |
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