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3LP01SS 반도체 회로 부품 판매점

P-Channel Small Signal MOSFET



ON Semiconductor 로고
ON Semiconductor
3LP01SS 데이터시트, 핀배열, 회로
Ordering number : EN6648B
3LP01SS
P-Channel Small Signal MOSFET
–30V, –0.1A, 10.4Ω, Single SSFP
http://onsemi.com
Features
Low ON-resistance
High-speed switching
2.5V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW10μs, duty cycle1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
--30
±10
--0.1
--0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7029A-003
1.4
0.25 0.1
3
3LP01SS-TL-E
3LP01SS-TL-H
0 to 0.02
1
0.45
2
0.2
12
3
1 : Gate
2 : Source
3 : Drain
SSFP
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL
Marking
TL
Electrical Connection
3
XA
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981 No.6648-1/7


3LP01SS 데이터시트, 핀배열, 회로
3LP01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
VDS= --10V, f=1MHz
See specied Test Circuit.
VDS= --10V, VGS= --10V, ID= --100mA
IS= --100mA, VGS=0V
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --50mA
RL=300Ω
D VOUT
3LP01SS
P.G 50Ω S
min
--30
Ratings
typ
--0.4
80
110
8
11
27
7.5
5.7
1.8
24
55
120
130
1.43
0.18
0.25
--0.83
max
--1
±10
--1.4
10.4
15.4
54
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
3LP01SS-TL-E
3LP01SS-TL-H
Package
SSFP
SSFP
Shipping
8,000pcs./reel
8,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
No.6648-2/7




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3LP01SS mosfet

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