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FQA9N90_F109 반도체 회로 부품 판매점

N-Channel QFET MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQA9N90_F109 데이터시트, 핀배열, 회로
FQA9N90_F109
N-Channel QFET® MOSFET
900 V, 8.6 A, 1.3
May 2014
Features
• 8.6 A, 900 V, RDS(on) = 1.3 (Max.) @ VGS = 10 V, ID = 4.3 A
• Low Gate Charge (Typ. 55 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
G
D
S
TO-3PN
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. C2
1
S
FQA9N90_F109
900
8.6
5.45
34.4
± 30
900
8.6
24
4.0
240
1.92
-55 to +150
300
FQA9N90_F109
0.52
0.24
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com


FQA9N90_F109 데이터시트, 핀배열, 회로
Package Marking and Ordering Information
Part Number
Top Mark Package Packing Method
FQA9N90_F109
FQA9N90
TO-3PN
Tube
Reel Size Tape Width
N/A N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.3 A
VDS = 50 V, ID = 4.3 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 450 V, ID = 8.6 A,
RG = 25
900
--
--
--
--
--
3.0
--
--
--
--
--
--
--
td(off)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 4)
VDS = 720 V, ID = 8.6 A,
VGS = 10 V
(Note 4)
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8.6 A,
dIF / dt = 100 A/µs
--
--
--
--
--
Typ. Max.
-- --
1.0 --
-- 10
-- 100
-- 100
-- -100
-- 5.0
1.0 1.3
9.2 --
2100
200
25
2700
260
33
45 100
100 210
135 280
80 170
55 72
12 --
26 --
-- 8.6
-- 34.4
-- 1.4
720 --
7.6 --
Unit
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
NOTES:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 23 mH, IAS = 8.6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 8.6 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
©2007 Fairchild Semiconductor Corporation
FQA9N90_F109 Rev. C2
2
www.fairchildsemi.com




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FQA9N90_F109 mosfet

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N-Channel QFET MOSFET - Fairchild Semiconductor