파트넘버.co.kr FDZ192NZ 데이터시트 PDF


FDZ192NZ 반도체 회로 부품 판매점

N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDZ192NZ 데이터시트, 핀배열, 회로
January 2010
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET
20 V, 5.3 A, 39 m
Features
„ Max rDS(on) = 39 mat VGS = 4.5 V, ID = 2.0 A
„ Max rDS(on) = 43 mat VGS = 2.5 V, ID = 2.0 A
„ Max rDS(on) = 49 mat VGS = 1.8 V, ID = 1.0 A
„ Max rDS(on) = 55 mat VGS = 1.5 V, ID = 1.0 A
„ Occupies only 1.5 mm2 of PCB area.Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ HBM ESD protection level > 2200V (Note3)
„ RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
„ Battery management
„ Load switch
„ Battery protection
PIN1
S
SG
DS
D
BOTTOM
TOP
WL-CSP 1x1.5 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
5.3
15
1.9
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
133
°C/W
Device Marking
8
Device
FDZ192NZ
Package
WL-CSP 1x1.5 Thin
Reel Size
7”
Tape Width
8 mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
1
www.fairchildsemi.com


FDZ192NZ 데이터시트, 핀배열, 회로
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
20
V
10 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.4 0.7 1.0
V
ID = 250 µA, referenced to 25 °C
-3 mV/°C
VGS = 4.5 V, ID = 2.0 A
VGS = 2.5 V, ID = 2.0 A
VGS = 1.8 V, ID = 1.0 A
VGS = 1.5 V, ID = 1.0 A
VGS = 4.5 V, ID = 2.0 A,
TJ =125 °C
VDS = 5 V, ID = 5.3 A
26 39
29 43
33 49 m
38 55
31 47
36 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
915 1220
145 195
100 150
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 5.3 A,
VGS = 4.5 V, RGEN = 6
VGS = 0 V to 4.5 V VDD = 10 V,
ID = 5.3 A
6.5 13 ns
4 10 ns
50 80 ns
20 32 ns
12 17 nC
1.3 nC
2.3 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 1.1 A (Note 2)
IF = 5.3 A, di/dt = 100 A/µs
0.6 1.2
V
18 32 ns
4.6 10 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 65 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
2
www.fairchildsemi.com




PDF 파일 내의 페이지 : 총 7 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDZ192NZ mosfet

데이터시트 다운로드
:

[ FDZ192NZ.PDF ]

[ FDZ192NZ 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDZ192NZ

N-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET - Fairchild Semiconductor