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PDF HY4903P Data sheet ( Hoja de datos )

Número de pieza HY4903P
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes HOOYI 
Logotipo HOOYI Logotipo



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HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
30V/290A
RDS(ON)= 1.6m(typ.) @ VGS=10V
100% EAS Guaranteed
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
Halogen - Free Device Available
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ordering and Marking Information
D
G N-Channel MOSFET
S
PB
HY4903 HY4903
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY4903P pdf
HY4903P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
640
560
V = 7,8,9,10V
GS
480 6V
400
320 5V
240
160 4V
80 3V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
4
3
V =4.5V
GS
2
V =10V
GS
1
0
0 100 200 300 400 500
ID - Drain Current (A)
Drain-Source On Resistance
8
I =145A
DS
7
6
5
4
3
2
1
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
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HY4903P arduino
HY4903P/B
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax)
3 °C/second max.
183 °C
60-150 seconds
See Classification Temp in table 1
20** seconds
6 °C/second max.
3°C/second max.
217 °C
60-150 seconds
See Classification Temp in table 2
30** seconds
6 °C/second max.
Time 25°C to peak temperature
6 minutes max.
8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<2.5 mm
235 °C
2.5 mm
220 °C
Volume mm3
350
220 °C
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
Thickness
<350
<1.6 mm
260 °C
1.6 mm – 2.5 mm
260 °C
2.5 mm
250 °C
Volume mm3
350-2000
260 °C
250 °C
245 °C
Volume mm3
>2000
260 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
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