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ME20N10-G 반도체 회로 부품 판매점

N-Channel 100V (D-S) MOSFET



Matsuki 로고
Matsuki
ME20N10-G 데이터시트, 핀배열, 회로
ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
GENERAL DESCRIPTION
The ME20N10 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits ,
and low in-line power loss are needed in a very small outline surface
mount package.
PIN CONFIGURATION
FEATURES
RDS(ON)78m@VGS=10V
RDS(ON)98m@VGS=5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
(TO-252-3L)
Top View
e Ordering Information: ME20N10 (Pb-free)
ME20N10-G (Green product-Halogen free )
Absolute Maximum Ratings (Tc=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current*
TC=25
TC=70
Pulsed Drain Current
Maximum Power Dissipation*
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJC
Maximum Ratings
100
±20
19
15
76
45
29
-55 to 150
2.8
Unit
V
V
A
A
W
℃/W
Jul, 2012-Ver1.4
01


ME20N10-G 데이터시트, 핀배열, 회로
ME20N10/ME20N10-G
N- Channel 100V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
100 V
1 2.5 V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=80V, VGS=0V
±100
1
nA
μA
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 12A
VGS=5V, ID= 12A
65 78
mΩ
75 98
VSD Diode Forward Voltage
IS=12A, VGS=0V
1.3 V
DYNAMIC
Qg Total Gate Charge
VDS=80V, VGS=10V, ID=15.7A
28.6
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS=80V, VGS=5V, ID=15.7A
16.8
7.3
nC
Qgd Gate-Drain Charge
9.7
Ciss Input capacitance
1120
Coss
Output Capacitance
VDS=15V, VGS=0V, F=1MHz
83 pF
Crss
Reverse Transfer Capacitance
54
Rg Gate Resistance
VDS=0V, VGS=0V, f=1MHz
1.4
td(on)
Turn-On Delay Time
25.5
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
VDS=50V, RL =3.3Ω
VGEN=5V, RG=4.7Ω
429
45.5
tf Turn-On Fall Time
91.2
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Ω
ns
Jul, 2012-Ver1.4
02




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ME20N10-G mosfet

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ME20N10-G

N-Channel 100V (D-S) MOSFET - Matsuki