파트넘버.co.kr 6N90Z 데이터시트 PDF


6N90Z 반도체 회로 부품 판매점

900V N-CHANNEL POWER MOSFET



Unisonic Technologies 로고
Unisonic Technologies
6N90Z 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
6N90Z
Preliminary
6.2A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N90Z is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide costumers
with planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 6N90Z is generally applied in high efficiency switch
mode power supplies.
FEATURES
* RDS(ON) < 2.3@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
1
1
Power MOSFET
TO-220
TO-262
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N90ZL-TA3-T
6N90ZG-TA3-T
6N90ZL-TQ2-T
6N90ZG-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-262
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING INFORMATION
PACKAGE
TO-220
TO-262
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
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6N90Z 데이터시트, 핀배열, 회로
6N90Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
ID
IDM
EAS
EAR
dv/dt
900 V
±20 V
6.2 A
24 A
300 mJ
16.7 mJ
4.5 V/ns
Power Dissipation
PD 125 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.6mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS VDS=900V, VGS=0V
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.1A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
VDD=30V, ID=1A, RG=25
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=6.2A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR IS=6.2A, VGS=0V, dIF/dt=100A/µs
QRR (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
900 V
1.07 V/°C
10 µA
+5 µA
-5 µA
3.0 5.0 V
1.72 2.3
1270 1770 pF
110 145 pF
15 25 pF
45 55
5
13
80 110
100 150
210 250
125 145
nC
nC
nC
ns
ns
ns
ns
6.2
24.8
1.4
630
6.9
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-953.b




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