NVB25P06T4G 반도체 회로 부품 판매점
Power MOSFET ( Transistor )
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 ON Semiconductor |
NTB25P06, NVB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to
withstand high energy in the avalanche and commutation modes.
Features
• AEC Q101 Qualified − NVB25P06
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• PWM Motor Controls
• Power Supplies
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
−60
V
VGS
VGSM
"15
"20
V
Vpk
ID
IDM
PD
TJ, Tstg
27.5
80
120
−55 to
+175
A
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V,
IL(pk) = 20 A, L = 3 mH, RG = 25 W)
EAS 600 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
1.25
46.8
63.2
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.412 in2).
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V(BR)DSS
−60 V
RDS(on) TYP
65 mW @ −10 V
ID MAX
−27.5 A
P−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
4
2
1
3
D2PAK
CASE 418B
NTB
25P06G
AYWW
Drain
Gate
Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
NVB25P06T4G
D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1
Publication Order Number:
NTB25P06/D
NTB25P06, NVB25P06
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 V, ID = −250 mA)
(Positive Temperature Coefficient)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 V, VDS = −60 V, TJ = 25°C)
(VGS = 0 V, VDS = −60 V, , TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 V, VDS = 0 V)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mA)
(Negative Threshold Temperature Coefficient)
IDSS
IGSS
VGS(th)
Static Drain−Source On−State Resistance
(VGS = −10 V, ID = −12.5 A)
(VGS = −10 V, ID = −25 A)
Forward Transconductance
(VDS = −10 V, ID = −12.5 A)
RDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −25 V, VGS = 0 V,
F = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −30 V, ID = −25 A,
VGS = −10 V RG = 9.1 W)
Fall Time
Gate Charge
(VDS = −48 V, ID = −25 A,
VGS = −10 V)
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = −25 A, VGS = 0 V)
(IS = −25 A, VGS = 0 V, TJ = 150°C)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
VSD
Reverse Recovery Time
(IS = −25 A, VGS = 0 V,
dIS/dt = 100 A/ms)
trr
ta
tb
Reverse Recovery Stored Charge
QRR
3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
−60
−
−
−
−
−2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ
−
64
−
−
−
−2.8
6.2
0.065
0.070
13
1200
345
90
14
72
43
190
33
6.5
15
−1.8
−1.4
70
50
20
0.2
Max Unit
−
−
−10
−100
±100
V
mV/°C
mA
nA
−4.0
−
0.075
0.082
−
V
mV/°C
W
Mhos
1680
480
180
pF
24 ns
118 ns
68 ns
320 ns
50 nC
−
−
−2.5
−
−
−
−
−
V
ns
mC
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NVB25P06T4G mosfet
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