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PDF NVD5806N Data sheet ( Hoja de datos )
| Número de pieza | NVD5806N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5806N, NVD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable − NVD5806N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
±20
±30
33
23
40
67
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 33 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
EAS
39 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
Value
3.7
57.5
Unit
°C/W
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 6
1
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
26 mW @ 4.5 V
19 mW @ 10 V
D
ID MAX
33 A
N−CHANNEL MOSFET
G
S
4
4
12
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead DPAK)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
5806N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTD5806N/D
1 page  
NTD5806N, NVD5806N
TYPICAL PERFORMANCE CHARACTERISTICS
10
D = 0.5
1 0.2
0.1
0.05
0.1
0.00001
0.02
0.01
Single Pulse
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 12. Thermal Response
0.1
1
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5806NG
IPAK (Straight Lead DPAK)
(Pb−Free)
75 Units / Rail
NTD5806NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5806NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NVD5806N.PDF ] | |
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