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NVD4809N 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



ON Semiconductor 로고
ON Semiconductor
NVD4809N 데이터시트, 핀배열, 회로
NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified − NVD4809N
These Devices are Pb−Free and are RoHS Compliant
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
13.1
10.1
2.63
9.6
7.4
1.4
58
45
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
52
130
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
43 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 13.5 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS 91.0 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 14
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
9.0 mW @ 10 V
14 mW @ 4.5 V
D
ID MAX
58 A
N−Channel
G
S
4
4
4
12
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
1 23
1
2
3
IPAK
IPAK
CASE 369AD CASE 369D
(Straight Lead) (Straight Lead
STYLE 2 DPAK) STYLE 2
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
4809N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4809N/D


NVD4809N 데이터시트, 핀배열, 회로
NTD4809N, NVD4809N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.9
3.5
57.1
107.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
25
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
10
±100
mA
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
2.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ
5.7 mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 to
11.5 V
ID = 30 A
ID = 15 A
7.0 9.0 mW
7.0
VGS = 4.5 V
ID = 30 A
12 14
ID = 15 A
11
Forward Transconductance
gFS VDS = 15 V, ID = 15 A
9.0 S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
1456
pF
315
200
11 13 nC
2.5
4.8
5.0
25 nC
Turn−On Delay Time
td(on)
12.3 ns
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
21.3
15.1
Fall Time
tf
5.3
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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