파트넘버.co.kr IRL3714ZSPbF 데이터시트 PDF


IRL3714ZSPbF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRL3714ZSPbF 데이터시트, 핀배열, 회로
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95661
IRL3714ZPbF
IRL3714ZSPbF
IRL3714ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:20V 16m
4.8nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714Z
D2Pak
IRL3714ZS
TO-262
IRL3714ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface
Junction-to-Ambient
hJunction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
20
± 20
36g
25g
140
35
18
0.23
-55 to + 175
300 (1.6mm from case)
Typ.
–––
0.50
–––
–––
Max.
4.3
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
7/30/04


IRL3714ZSPbF 데이터시트, 핀배열, 회로
IRL3714Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.015 ––– mV/°C Reference to 25°C, ID = 1mA
––– 13
e16 mVGS = 10V, ID = 15A
––– 21 26
eVGS = 4.5V, ID = 12A
1.65 2.1 2.55 V VDS = VGS, ID = 250µA
––– -5.2 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
21 ––– –––
––– 4.8 7.2
S VDS = 10V, ID = 14A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 1.7 –––
––– 0.80 –––
––– 1.7 –––
––– 0.60 –––
VDS = 10V
nC VGS = 4.5V
ID = 14A
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 2.5 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 2.7 ––– nC VDS = 10V, VGS = 0V
––– 6.0 –––
eVDD = 10V, VGS = 4.5V
––– 13 –––
ID = 14A
––– 10 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.0 –––
Ciss Input Capacitance
––– 550 –––
VGS = 0V
Coss Output Capacitance
––– 180 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 99 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
23
14
3.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
gMin. Typ. Max. Units
Conditions
––– ––– 36
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 140
––– ––– 1.0
––– 8.3 12
––– 1.5 2.3
A showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 14A, VGS = 0V
ens TJ = 25°C, IF = 14A, VDD = 10V
nC di/dt = 100A/µs
2 www.irf.com




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IRL3714ZSPbF mosfet

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