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Fairchild Semiconductor |
FDD14AN06LA0_F085
N-Channel PowerTrench® MOSFET
60V, 50A, 14.6mΩ
Features
• rDS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 50A
• Qg(tot) = 25nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
December 2010
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
Formerly developmental type 83557
DRAIN
(FLANGE)
GATE
SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC < 100oC, VGS = 10V)
Continuous (TC < 80oC, VGS = 5V)
Continuous (Tamb = 25oC, VGS = 5V, with RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance Junction to Case TO-252
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2
copper pad area
D
S
Ratings
60
±20
50
50
9.5
Figure 4
55
125
0.83
-55 to 175
1.2
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085 Rev. C
Package Marking and Ordering Information
Device Marking
FDD14AN06LA0
Device
Package
FDD14AN06LA0_F085 TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 50A, VGS = 10V
ID = 50A, VGS = 5V
ID = 50A, VGS = 5V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 30V
ID = 50A
Ig = 1.0mA
Switching Characteristics (VGS = 5V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 30V, ID = 50A
VGS = 5V, RGS = 5.1Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 70uH, IAS = 40A.
ISD = 50A
ISD = 25A
ISD = 50A, dISD/dt = 100A/µs
ISD = 50A, dISD/dt = 100A/µs
Min Typ Max Units
60 - - V
- -1
µA
- - 250
- - ±100 nA
1 - 3V
- 0.0102 0.0116
- 0.0128 0.0146 Ω
- 0.028 0.033
- 2810 -
pF
- 270 -
pF
- 115 -
pF
25 32 nC
- 2.7 3.5 nC
- 9.7 - nC
- 7.0 - nC
- 8.7 - nC
- - 218 ns
- 14 - ns
- 132 -
ns
- 27 - ns
- 47 - ns
- - 111 ns
-
-
1.25
V
- - 1.0 V
- - 30 ns
- - 24 nC
©2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085 Rev. C
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