FDD26AN06A0_F085 반도체 회로 부품 판매점
N-Channel PowerTrench MOSFET
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 Fairchild Semiconductor |
FDD26AN06A0_F085
N-Channel PowerTrench® MOSFET
60V, 36A, 26mΩ
Features
• rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A
• Qg(tot) = 13nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Aug 2011
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
S
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Ratings
60
±20
36
25
7
Figure 4
35
75
0.5
-55 to 175
2.0
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Package Marking and Ordering Information
Device Marking
FDD26AN06A0
Device
FDD26AN06A0_F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 36A, VGS = 10V
ID = 36A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 36A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 30V, ID = 36A
VGS = 10V, RGS = 25Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 83µH, IAS = 29A, VDD = 54V, VGS = 10V.
ISD = 36A
ISD = 18A
ISD = 36A, dISD/dt = 100A/µs
ISD = 36A, dISD/dt = 100A/µs
Min Typ Max Units
60 - - V
- -1
µA
- - 250
- - ±100 nA
2 - 4V
- 0.020 0.026
Ω
- 0.045 0.058
- 800 -
pF
- 155 -
pF
- 55 - pF
- 13 17 nC
- 1.7 2.2 nC
- 4.3 - nC
- 2.6 - nC
- 4.6 - nC
- - 123 ns
- 9 - ns
- 72 - ns
- 23 - ns
- 35 - ns
- - 88 ns
- - 1.25 V
- - 1.0 V
- - 43 ns
- - 50 nC
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
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FDD26AN06A0_F085 mosfet
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