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FDS4410A 반도체 회로 부품 판매점

Single N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDS4410A 데이터시트, 핀배열, 회로
May 2005
FDS4410A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
Features
10 A, 30 V. RDS(ON) = 13.5 m@ VGS = 10 V
RDS(ON) = 20 m@ VGS = 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D
D
D
D
SO-8
Pin 1
G
S
S
S
54
63
72
81
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain–Source Voltage
Gate–Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Ratings
30
±20
10
50
2.5
1.0
–55 to +150
50
125
25
Package Marking and Ordering Information
Device Marking
FDS4410A
Device
FDS4410A
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4410A Rev. B
1
www.fairchildsemi.com


FDS4410A 데이터시트, 핀배열, 회로
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
VGS = ±20 V, VDS = 0 V
30
25
V
mV/°C
1
10
±100
µA
nA
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 10 A, TJ = 125°C
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 10 A
1 1.9 3
V
–5 mV/°C
9.8 13.5
12.0 20
13.7 23
m
50 A
48 S
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1205
290
115
2.4
pF
pF
pF
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDS = 15 V, ID = 1 A, VGS = 10 V,
RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
VDD = 15 V, ID = 10 A, VGS = 5 V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
9 19
5 10
28 44
9 19
12 16
3.4
4.0
ns
ns
ns
ns
nC
nC
nC
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 10A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
2.1
0.74 1.2
24
27
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4410A Rev. B
2
www.fairchildsemi.com




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