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PDF FDD1600N10ALZD Data sheet ( Hoja de datos )
| Número de pieza | FDD1600N10ALZD | |
| Descripción | N-Channel PowerTrench MOSFET + Diode | |
| Fabricantes | Fairchild Semiconductor | |
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November 2013
FDD1600N10ALZD
BoostPak (N-Channel PowerTrench® MOSFET + Diode)
100 V, 6.8 A, 160 mΩ
Features
• RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
• Low Gate Charge (Typ. 2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop
and excellent switching performance.
Applications
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
DC-DC converter (Step up & Step down)
3
12
45
3
TO252-5L
1. Gate
2. Source
3. Drain / Anode
4. Cathode
5. Cathode
1
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
IF
IFM
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Diode Continuous Forward Current (TC = 124oC)
Diode Maximum Forward Current
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case for MOSFET, Max.
Thermal Resistance, Junction to Case for Diode, Max.
Thermal Resistance, Junction to Ambient, Max.
4,5
2
FDD1600N10ALZD
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
4
40
-55 to +150
300
FDD1600N10ALZD
8.4
3.3
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
A
A
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDD1600N10ALZD Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics - MOSFET (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-80
*Notes:
1. VGS = 0V
2. ID = 250μA
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 9. Maximum Safe Operating Area
30
10
100us
1ms
1 10ms
Operation in This Area
is Limited by R DS(on)
0.1 SINGLE PULSE
TC = 25oC
100ms
DC
TJ = 150oC
0.01
1
RθJC = 8.4oC/W
10
100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
0.25
0.20
0.15
0.10
0.05
0
0 20 40 60 80 100
VDS, Drain to Source Voltage [V]
©2013 Fairchild Semiconductor Corporation
FDD1600N10ALZD Rev. C2
5
Figure 8. On-Resistance Variation
vs. Temperature
2.4
2.0
1.6
1.2
0.8
0.4
-80
*Notes:
1. VGS = 10V
2. ID = 3.4A
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
VGS = 10V
4 VGS = 5V
2
RθJC = 8.4oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 12. Unclamped Inductive
Switching Capability
8
7
6
5
4
TJ = 25 oC
3
TJ = 125 oC
2
150
01.001
0.01 0.1
tAV, TIME IN AVALANCHE (ms)
1
www.fairchildsemi.com
5 Page 
Mechanical Dimensions
Figure 26. TO252 (D-PAK), Molded, 5-Lead, Option AD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-005
©2013 Fairchild Semiconductor Corporation
FDD1600N10ALZD Rev. C2
11
www.fairchildsemi.com
11 Page | ||
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| PDF Descargar | [ Datasheet FDD1600N10ALZD.PDF ] | |
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