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PDF K4069 Data sheet ( Hoja de datos )
| Número de pieza | K4069 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 15 A)
• Low QGD: QGD = 3.2 nC TYP.
• 4.5 V drive available
ORDERING INFORMATION
<R>
PART NUMBER
2SK4069(1)-S27-AY Note
2SK4069-ZK-E1-AY Note
2SK4069-ZK-E2-AY Note
PACKAGE
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TC = 25°C)
PT1 21
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 18
EAS 32.4
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-251)
(TO-252)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18032EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
25
20 VGS = 4.5 V
15
10 V
10
5 ID = 15 A
Pulsed
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
10 td(on)
tf
VDD = 12 V
VGS = 12 V
RG = 3 Ω
1
0.1 1
tr
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100 VGS = 10 V
4.5 V
10
0V
1
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4069
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
Coss
100
VGS = 0 V
f = 1 MHz
10
0.1 1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
25
VDD = 20 V／ID = 30 A
12 V／30 A
20 5 V／22.5 A
14
12
10
15 8
10 VGS 6
5 VDS
4
2
00
0 5 10 15
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
1
0.1 1 10
IF - Diode Forward Current - A
100
Data Sheet D18032EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K4069.PDF ] | |
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