K4093 반도체 회로 부품 판매점
Silicon N Channel MOS FET
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 Renesas |
2SK4093
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Capable of 2.5V gate drive
• Low drive current
• Low on-resistance
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 30%
2. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
VDSS
VGSS
ID Note1
ID
Note2
(pulse)
IDR
IDR
Note2
(pulse)
Pch
θch-a
Tch
Tstg
REJ03G1534-0300
Rev.3.00
Feb 01, 2008
D
1. Source
2. Drain
3. Gate
S
Ratings
250
±10
1
2
0.5
2
0.9
139
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 1 of 6
2SK4093
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
250
±10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Notes: 3. Pulse test
Typ
—
—
—
—
—
1.9
2.0
140
18
6
14
17
46
16
5.5
0.4
3.1
0.78
80
Max
—
—
1
±10
1.5
2.6
2.7
Unit
V
V
µA
µA
V
Ω
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 250 V, VGS = 0
VGS = ±8 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VGS = 4 V Note3
Ω ID = 0.5 A, VGS = 2.5 V Note3
—
—
—
—
—
—
—
—
—
—
1.20
—
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 0.5 A
ns VGS = 4 V
ns RL = 250 Ω
ns Rg = 10 Ω
nC VDD = 200 V
nC VGS = 4 V
nC ID = 1 A
V IF = 0.5 A, VGS = 0 Note3
ns IF = 0.5 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1534-0300 Rev.3.00 Feb 01, 2008
Page 2 of 6
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K4093 mosfet
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