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PDF BLM3415 Data sheet ( Hoja de datos )
| Número de pieza | BLM3415 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | BELLING | |
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Pb Free Product
BLM3415
P-Channel Enhancement Mode Power MOSFET
Description
The BLM3415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as1.8V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = -20V,ID =-4A
RDS(ON) < 60mΩ @ VGS=-2.5V
RDS(ON) < 47mΩ @ VGS=-4.5V
ESD Rating: 2500V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● PWM application
● Load switch
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3415
BLM3415
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
-20
±10
-4
-30
1.4
-55 To 150
89.3
Unit
V
V
A
A
W
℃
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-20 - V
Page1
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Pb Free Product
BLM3415
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
Page5
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BLM3415.PDF ] | |
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