파트넘버.co.kr BLV6N60 데이터시트 PDF


BLV6N60 반도체 회로 부품 판매점

N-Channel Enhancement Mode Power MOSFET



BELLING 로고
BELLING
BLV6N60 데이터시트, 핀배열, 회로
BLV6N60
N-channel Enhancement Mode Power MOSFET
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BVDSS
RDS(ON)
ID
600V
1.2Ω
6A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
Tj
TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 20
6
3.8
24
125
1
490
6
12.5
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
Value
1
62.5
http://www.belling.com.cn
-1-
Total 6 Pages
Units
V
V
A
A
A
W
W/
mJ
A
mJ
oC
oC
Units
/ W
/ W
3/28/2007


BLV6N60 데이터시트, 핀배열, 회로
BLV6N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
BVDSS
BVDSS
/TJ
RDS(ON)
VGS(th)
g fs
IDSS
IGSS
Qg
Qgs
Qgd
t (on)
tr
t (off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
Reference to 25,
ID=1mA
VGS=10V, ID=3A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance (note3) VDS=15V, ID=3A
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125
VDS=600V, VGS=0V
VDS=480V, VGS=0V
Gate-Source Leakage Current
VGS= ± 20V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V
ID=6A
VGS=10V
(note3)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=300V
ID=6A
RG=25
note3
(note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 1MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Units
- -V
0.6 - V/
- 1.2 Ω
- 4V
5-S
- 1 uA
- 100 uA
-
35.5
8.1
14.1
14
19
40
26
1074
158
29
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions Min.
IS Continuous Source Diode Forward Current
-
ISM Pulsed Source Diode Forward Current (note1)
-
VSD Forward On Voltage
VGS=0V, IS=6A
-
t r r Reverse Recovery Time
VGS=0V, IS=6A(note3) -
Qr r
Reverse Recovery Charge
dIF/dt =100A/us
-
Typ. Max.
-
-
-
1020
2
6
24
1.8
-
-
Units
A
A
V
ns
uC
Note
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH, Ias=6AVdd=50VRg=25staring Tj=25C
(3) Pulse width 300 us; duty cycle 2%
http://www.belling.com.cn
-2-
Total 6 Pages
3/28/2007




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제조업체: BELLING

( belling )

BLV6N60 mosfet

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BLV6N60

N-Channel Enhancement Mode Power MOSFET - BELLING