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PDF STP10N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STP10N60M2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB10N60M2, STD10N60M2,
STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet − production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220
TAB
3
1
DPAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax
RDS(on)
max
ID
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
650 V
0.600 Ω 7.5 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
Table 1. Device summary
Marking
Package
2
D PAK
10N60M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID024710 Rev 2
1/24
www.st.com
24
1 page  
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
7.5 A
30 A
1.6 V
270 ns
2 μC
14.4 A
376 ns
2.8 μC
15 A
DocID024710 Rev 2
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5 Page 
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Package mechanical data
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Table 9. D²PAK (TO-263) mechanical data
mm
Min.
Typ.
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
2.54
4.88
15
2.49
2.29
1.27
1.30
0.4
0°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
DocID024710 Rev 2
11/24
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet STP10N60M2.PDF ] | |
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