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PDF NTMFS4926N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4926N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4926N
Power MOSFET
30 V, 44 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Optimized for 5 V, 12 V Gate Drives
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
15.5
9.8
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.70 W
23.4 A
14.8
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.13 W
9.0 A
5.7
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
44 A
28
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
21.6 W
182 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
−55 to
+150
21
6.0
22
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 5
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.2 mW @ 4.5 V
D (5,6)
ID MAX
44 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4926N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4926NT1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4926NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4926N/D
1 page  
NTMFS4926N
TYPICAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
0
TJ = 25°C
Ciss VGS = 0 V
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
tf
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10 100 ms
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.01 0.1
1
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
10
QT
9
8
7
6
5
4 Qgs
3
2
1
0
02
Qgd
46
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
8 10 12 14 16 18
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
15
10
TJ = 125°C
5
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
22
20 ID = 21 A
18
16
14
12
10
8
6
4
2
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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| PDF Descargar | [ Datasheet NTMFS4926N.PDF ] | |
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