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ETC |
Features
♦Low On-Resistance
♦Fast Switching
♦High Effective
♦Lead-Free, RoHS Compliant
SL03N06
60V/3A N-Channel Advanced Power MOSFET
Description
SL03N06 designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely
efficient and reliable device for use in Switch applications
and a wide variety of other small power supply applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested ①
ID Continuous Drain current@VGS=4.5V ②
PD Maximum Power Dissipation
RθJA Thermal Resistance Junction-Ambient
Rating
TC =25°C
±20
60
175
-55 to 155
3
TC =25°C
TC =25°C
TC =25°C
12
3
1.75
155
Unit
V
V
°C
°C
A
A
A
W
°C/W
Page - 1 - Total 4
SL03N06
60V/3A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
Zero Gate Voltage Drain Current(Tc=125℃)
VGS=0V ID=250μA
VDS=60V,VGS=0V
VDS=60V,VGS=0V
60
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
VGS(TH)
RDS(ON)
gfs
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance②
Forward Transconductance
VGS=±20V,VDS=0V
--
VDS=VGS,ID=250μA 0.8
VGS=4.5V, ID=2A
--
VDS= 15V, ID=1.8A
3
-- ±100
1.1 1.5
95 105
-- --
nA
V
mΩ
S
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
-- 250
VDS=30V,VGS=0V,
f=1MHz
--
35
-- 20
VDS=30V,ID=1A,
VGS=4.5V
-- 6
-- 1.2
-- 1.3
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,
ID=1A,
RG=6.8Ω,
VGS=4.5V
-- 6
-- 15
-- 16
-- 10
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
--
--
--
--
--
--
--
--
--
--
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
ISD Source-drain current(Body Diode) ②
Tc=25℃
VSD
NOTE:
Forward on voltage
ISD=3A,VGS=0V
① Repetitive rating; pulse width limited by max. junction temperature.
② Pulse width ≤ 300μs; duty cycle≤ 2%.
-- -- 3
A
-- -- 1.2 V
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