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PDF IXAN0065 Data sheet ( Hoja de datos )
| Número de pieza | IXAN0065 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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IXYS Power MOSFET Datasheet Parameters Definition
Abdus Sattar, IXYS Corporation
IXAN0065
IXYS provides datasheets with parameters that are essential and useful for
selecting the appropriate device as well as for predetecting its performance in an
application. The graphs included in the datasheet represent typical performance
characteristic and can be used to extrapolate from one set of operating conditions to
another. Power MOSFET generally contains a body diode, which provides “free
wheeling” operation in the inductive load switching. Figure 1 shows the equivalent
circuit for an N-Channel and a P-Channel Power MOSFET.
Figure 1: (a) an N-Channel (b) a P-Channel Enhancement-Mode Power MOSFET1
Essential Ratings and Characteristics
1. Maximum Ratings
The ratings are limiting values for a device and valid for the whole range of operating
conditions3.
1.1 Temperature
1.1.1 Junction Temperature TJ and TJM
The junction temperature (TJ ) range is -55 ~ 150oC in most cases and it is the
device’s permissible temperature range within which the device may be operated
continuously. The maximum junction temperature ( TJM ) is 150oC unless
otherwise specified (in some cases 175oC). Junction temperature varies electrical
parameters of Power MOSFET, for example, at very low temperature (< -55oC),
the device can loss its functionality and at very high temperature, the device’s
threshold voltage becomes very low and leakage current becomes very high. It
also can cause thermal run away within the device at very high value.
1.1.2 Storage Temperature TStg
It is the range of temperature for storage or transportation of the dev ice and it
must be between -55 ~ 150oC.
1.1.3 Lead Temperature TL
It is the maximum lead temperature during soldering and it must not exceed
300 oC for 10 seconds at 1/8” from the case.
1.2 Power Dissipation PD
1
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IXYS Power MOSFET Datasheet Parameters Definition
Abdus Sattar, IXYS Corporation
IXAN0065
drain-source voltage and gate-source voltage. The gate charge reflects the charge
stored on the inter-terminal capacitances described earlier and is used in designing
the gate drive circuit.
2.6 Switching times (td (on), tr, td (off), tf)3
2.6.1 Turn-on Delay Time td (on)
The turn-on delay time is defined as the time interval when the gate-source
voltage (VGS) has reached 10 % of its end value (VGG), to the time when the drain-
source voltage (VDS) has dropped to 90 % of its initial value (VDD).
2.6.2 Rise Time tr
Following the turn-on delay time, the rise-time follows; it is the interval between
the drain-source voltages from 90% to 10% of its initial value. The drain current
starts to rise and the major part of turn-on losses is generated during this period.
2.6.3 Turn-off Delay Time td (off)
The turn-off delay time is defined as the time interval between the moment when
the gate-emitter voltage (VGE) has declined to 90 % of its initial value (VGG) and
the drain-source voltage has risen to 10 % of the supply voltage VDD.
2.6.4 Fall Time tf
Following the turn-off delay time, the fall-time follows; it is the interval between
the drain-source voltage rises from 10% to 90% of its end value. During this
period, the drain current starts to fall and the major part of turn-off losses is
generated during this time.
2.7 Turn-on energy (per pulse) Eon where appropriate3
2.8 Turn-off energy (per pulse) Eoff where appropriate3
2.9 Thermal Characteristic2
Power MOSFETs operate at elevated junction temperature and it is important to
observe their thermal limitations in order to achieve acceptable performance and
reliability.
2.9.1 Thermal Resistance Junction to Case RthJC
It’s the thermal resistance from the junction of the die to the outside of the device
case. Itdescribes the passage of heat between the semiconductor chip and case.
IXYS specifies maximum static RthJC.
2.9.2 Thermal Resistance Case to Heatsink RthCK
The thermal resistance case to sink characterizes the static heat dissipation of a
MOSFET and depends on module size, heatsink, case surfaces, thickness
parameters of thermal layers between module and heatsink.
3.0 Intrinsic Diode Characteristics2
3.1 Intrinsic Diode Forward Voltage VSD
The forward voltage is the maximum forward drop of the intrinsic diode at a
specified value of source current.
3.2 Reverse Recovery Time trr
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IXYS Power MOSFET Datasheet Parameters Definition
Abdus Sattar, IXYS Corporation
IXAN0065
Figure 7: Gate Charge [IXTH/IXTQ130N10T]5
6. Gate Charge:
It’s the total gate charge required to raise the gate-source voltage to 15V, which is
necessary in most cases to fully turn-on the device. All values are measured at a specified
drain current, drain-source voltage and gate current. A typical gate charge waveform for a
power MOSFET is shown in Figure 7. The gate charge reflects the charge stored on the
inter-terminal capacitances described earlier and is used in designing the gate drive
circuit.
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| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet IXAN0065.PDF ] | |
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