FY5ACJ-03A 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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 Powerex Power Semiconductors |
FY5ACJ-03A
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
Dimensions in mm
q 4V DRIVE
q VDSS .................................................................................. 30V
q rDS (ON) (MAX) ............................................................. 30mΩ
q ID ........................................................................................... 5A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
30
±20
5
35
5
1.6
6.4
1.7
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2.5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.6A, VGS = 0V
Channel to ambient
IS = 1.6A, dis/dt = –50A/µs
Limits
Min. Typ. Max.
30 — —
— — ±0.1
— — 0.1
1.0 1.5 2.0
— 22 30
— 34 55
— 110 150
— 10 —
— 760 —
— 270 —
— 125 —
— 15 —
— 20 —
— 50 —
— 40 —
— 0.75 1.10
— — 73.5
— 40 —
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
5
3
2 tw = 100µs
101
7
5 1ms
3
2
100 10ms
7
5
100ms
3
2
10–1 TC = 25°C
7 Single Pulse
5
23
5 7 100 2 3
DC
5 7 101 2 3 5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V 8V
6V
5V
40
TC = 25°C
30 Pulse Test
4V
20
10
3V
PD = 1.7W
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGS = 10V
8V
6V
16
5V 4V
TC = 25°C
Pulse Test
12
8
3V
4
PD = 1.7W
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
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FY5ACJ-03A mosfet
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