FY5ACH-03A 반도체 회로 부품 판매점
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
|
 Powerex Power Semiconductors |
FY5ACH-03A
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
Dimensions in mm
q 2.5V DRIVE
q VDSS .................................................................................. 30V
q rDS (ON) (MAX) ............................................................. 50mΩ
q ID ........................................................................................... 5A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
30
±10
5
35
5
1.7
6.8
1.6
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
ID = 2.5A, VGS = 2.5V
ID = 5A, VGS = 4V
ID = 5A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2.5A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambient
IS = 1.7A, dis/dt = –50A/µs
Limits
Min. Typ. Max.
30 — —
— — ±0.1
— — 0.1
0.5 0.9 1.3
— 40 50
— 52 80
— 0.20 0.25
— 11 —
— 750 —
— 180 —
— 80 —
— 18 —
— 45 —
— 52 —
— 44 —
—
0.75
1.1
— — 78.1
— 100 —
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
5
3 tw = 10µs
2
101 100µs
7
5
3 1ms
2
100
7
10ms
5 100ms
3
2
10–1 TC = 25°C
7 Single Pulse
5
23
5 7 100 2 3
DC
5 7 101 2 3 5 7 102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
OUTPUT CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VGS = 5V Pulse Test
4V
16
3.5V
2.5V
3V
12
OUTPUT CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
Pulse Test
VGS = 5V
8 4V
3.5V
3V
6 2.5V
2V
8
2V
4
1.5V
PD = 1.6W
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
4
PD = 1.6W
2
1.5V
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Powerex Power Semiconductors
( powerex )
FY5ACH-03A mosfet
데이터시트 다운로드 :
[ FY5ACH-03A.PDF ]
[ FY5ACH-03A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
FY5ACH-03A
HIGH-SPEED SWITCHING USE - Mitsubishi Electric Semiconductor
FY5ACH-03A
Nch POWER MOSFET HIGH-SPEED SWITCHING USE - Powerex Power Semiconductors