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PDF PV218N50 Data sheet ( Hoja de datos )
| Número de pieza | PV218N50 | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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QFET®
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
Features
• 550V @TJ = 150°C
• Typ. RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge (typical 42 nC)
• Low Crss (typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies, active power factor correc-
tion, electronic lamp ballast based on half bridge topology.
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220F
FQPF Series
G{
D
{
●
◀▲
●
●
{
S
FQP18N50V2 FQPF18N50V2
500
18 18*
12.1 12.1*
72 72*
± 30
330
18
25
4.5
208 69
1.67 0.55
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQP18N50V2/FQPF18N50V2 Rev. D
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. ransient Thermal Response Curve for FQP18N50V2
100
D = 0 .5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N o te s :
1 . Z θ JC(t) = 0 .6 ℃ /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF18N50V2
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le p u ls e
※ N o te s :
1 . Z θ JC(t) = 1 .8 ℃ /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
FQP18N50V2/FQPF18N50V2 Rev. D
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet PV218N50.PDF ] | |
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