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FDC365P 반도체 회로 부품 판매점

P-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDC365P 데이터시트, 핀배열, 회로
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A, 55m
Features
„ Max rDS(on) = 55mat VGS = -10V, ID = -4.2A
„ Max rDS(on) = 80mat VGS = -4.5V, ID = -3.2A
„ RoHS Compliant
November 2007
tm
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Applications
„ Inverter
„ Power Supplies
S
D
D
Pin 1
D
D
SuperSOTTM -6
G
D1
D2
G3
6D
5D
4S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-35
±20
-4.3
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.365P
Device
FDC365P
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
1
www.fairchildsemi.com


FDC365P 데이터시트, 핀배열, 회로
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -28V, VGS = 0V
VGS = ±20V, VDS = 0V
-35
V
-26 mV/°C
-1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
-1 -1.8 -3
V
ID = -250µA, referenced to 25°C
5.0 mV/°C
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.2A
VGS = -10V, ID = -4.2A, TJ = 125°C
VDS = -10V, ID = -4.2A
45 55
70 80 m
69 90
8.7 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
530 705
105 135
55 80
6.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -20V, ID = -4.2A,
VGS = -10V, RGEN = 6
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -20V,
ID = -4.2A
7 13 ns
3 10 ns
15 28 ns
3 10 ns
11 15 nC
6 9 nC
1.7 nC
2.2 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = -1.3A (Note 2)
IF = -4.2A, di/dt = 100A/µs
-0.8 -1.2
16 29
7 14
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a.78°C/W when mounted on a 1
in2 pad of 2 oz copper on FR-4
board.
b.156°C/W when mounted on a
minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
2
www.fairchildsemi.com




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FDC365P mosfet

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FDC365P

P-Channel PowerTrench MOSFET - Fairchild Semiconductor