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RF1S50N06SM 반도체 회로 부품 판매점

Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs



Harris 로고
Harris
RF1S50N06SM 데이터시트, 핀배열, 회로
SEMICONDUCTOR
RFG50N06, RFP50N06,
RF1S50N06, RF1S50N06SM
December 1995
50A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 50A, 60V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
The RFG50N06, RFP50N06, RF1S50N06, and
RF1S50N06SM N-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06
TO-262AA
F1S50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S50N06SM9A.
Formerly developmental type TA49018.
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
G
D
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .
VDSS
VDGR
VGS
ID
IDM
EAS
IAM
PD
PT
TSTG,TJ
RFG50N06, RFP50N06
RF1S50N06, RF1S50N06SM
60
60
±20
50
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-39
File Number 3575.2


RF1S50N06SM 데이터시트, 핀배열, 회로
Specifications RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified.
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 50A, VGS = 10V
VDD = 30V, ID = 50A
RL = 0.6, VGS = +10V
RGS = 3.6
VGS = 0 to 20V
VGS = 0 to 10V
VDD = 48V,
ID = 50A,
RL = 0.96
VGS = 0 to 2V
VDS = 25V, VGS = 0V
f = 1MHz
MIN TYP MAX UNITS
60 -
-
V
2-4
V
- - 1 µA
- - 50 µA
- - 100 nA
- - 0.022
- - 95 ns
- 12 -
ns
- 55 -
ns
- 37 -
ns
- 13 -
ns
- - 75 ns
- 125 150 nC
- 67 80 nC
- 3.7 4.5 nC
- 2020 -
pF
- 600 -
pF
- 200 -
pF
-
-
1.14
oC/W
- - 80 oC/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
Reverse Recovery Time
VSD ISD = 50A
tRR ISD = 50A, dISD/dt = 100A/µs
-
-
- 1.5 V
- 125 ns
3-40




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RF1S50N06SM mosfet

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