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Hitachi Semiconductor |
2SK2008
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC - DC converter, Motor Control
Outline
TO-3PFM
D
G1
2
3
1. Gate
2. Drain
3. Source
S
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
250
±30
20
80
20
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
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