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BYD Microelectronics |
BYD Microelectronics Co., Ltd.
BF975NF75B
75V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low
gate drive requirements.
Features
z VDS =75 V
z ID =80A
z Typical RDS(ON)=7.5m Ω (VGS=10V,ID=40A)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
TJ,Tstg
TL
Operating junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
75
80
320
±20
800
35
18
11
210
-55 to +175
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
℃
℃
Datasheet
TS-MOS-PD-0037 Rev.A/2
Page 1 of 6
BYD Microelectronics Co., Ltd.
Ordering Information
Part Number
BF975NF75B
Package
TO-220
BF975NF75B
Packaging
Tube
Thermal Data
Symbol Parameter
Rthj-Case Thermal Resistance Junction-Case
Rthj-Amb Thermal Resistance Junction-Ambient
Max.
0.6
63.0
Unit
℃/W
℃/W
Electrical Characteristics(Tc = 25℃)
Symbol Parameter
Test Conditions
Min.
V(BR)DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current
IGSS
Gate-Body Leakage
Current
ID=250uA, VGS=0V
VDS=75V, VGS=0V,Tc=25℃
VDS=75V,VGS=0V ,Tc=125℃
VGS=±20V ,VDS=0V
75
VGS(th)
RDS(on)
Ciss
Coss
Crss
Gate Threshold Voltage
Static Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS ,ID=250uA
VGS=10V ,ID=40A
VDS=20V,f=1MHZ,VGS=0V
2
td(on)
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
VDD=37.5V, RL=15Ω
VGS=10V ,RG=10Ω (Note4,5)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Forward On Voltage
Reverse Recovery Time
VDD=60V, ID=80A
VGS=10V
(Note4,5)
ISD=25A ,VGS=0V
VDD=37.5V,IF=80A,di/dt=100A/us
(Note4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. VDD = 37.5V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 80A, di/dt ≤ 280A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300μs, duty cycle ≤ 2%
5. Essentially independent of operating temperature
(*)Pulsed:Pulse duration
Typ.
7.5
3839
328
33.6
32
29
110
23
118
50
35
70
Max.
1
10
Unit
V
uA
uA
±100 nA
4V
10 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5 V
ns
Datasheet
TS-MOS-PD-0037 Rev.A/2
Page 2 of 6
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