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AP02N70EI-HF 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Advanced Power Electronics 로고
Advanced Power Electronics
AP02N70EI-HF 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
100% Avalanche Test
ESD Improved Capability
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP02N70EI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
G RDS(ON)
700V
7Ω
ID 1.6A
S
Description
AP02N70 from APEC provide the designer with the best
combination of fast switching , low on-resistance and cost-
effectiveness .
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GD S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+20
1.6
1
6.4
27.8
13
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.5
65
Units
/W
/W
1
201301041


AP02N70EI-HF 데이터시트, 핀배열, 회로
AP02N70EI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=1mA
VGS=10V, ID=0.8A
VDS=VGS, ID=250uA
VDS=10V, ID=0.8A
VDS=600V, VGS=0V
VGS=+20V, VDS=0V
ID=0.8A
VDS=560V
VGS=10V
VDD=350V
ID=0.8A
RG=4.7Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHz
700 -
-
- -7
2-4
- 0.65 -
- - 10
- - +10
- 17 30
- 1.5 -
- 11 -
- 10 -
-8-
- 21 -
- 15 -
- 170 300
- 30 -
- 20 -
V
Ω
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage3
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=1.6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 340 - ns
- 2550 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




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AP02N70EI-HF mosfet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics