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PNM723T703E0-2 반도체 회로 부품 판매점

N-Channel MOSFET



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PNM723T703E0-2 데이터시트, 핀배열, 회로
PNM723T703E0-2
N-Channel MOSFET
Description
PNM723T703E0-2 is designed for high speed switching applications
The enhancement mode MOS is extremely high density cell and low on-resistance.
D3
VDS(V)
40
MOSFET Product Summary
rDS(on)(Ω)
VGS(th)(V)
3.5@ VGS=10V
1 to 2.0
ID(A)
0.18
G1
S2
Electrical characteristics per line@25( unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
Symbol
Conditions
OFF CHARACTERISTICS
VDSS
IDSS
IGSS
VGS(th)
RDS(ON)
ID =10μA,VGS=0V
VDS =40V,VGS=0V
VDS =0V,VGS20V
VDS =VGS, ID =250μA
VGS=5V, ID =0.05A
VGS=10V, ID =0.5A,
DYNAMIC PARAMETERS
CISS
CDSS
CRSS
VGS=0V, VDS =25V,
f=1MHz
SWITCHING PARAMETERS
td(on)
td(off)
VDS=30V, VGS =10V,
RG=25, RL=150
ID =0.2A
Min. Typ. Max. Units
40 -
-V
- - 0.5 μA
- - ±1 μA
1-
-V
- - 4.5
- - 4.5
- - 40 pF
- - 20 pF
- - 5 pF
- - 20 ns
- - 20 ns
Rev.06
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PNM723T703E0-2 데이터시트, 핀배열, 회로
Absolute maximum rating@25
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Total Power Dissipation TA=25
PNM723T703E0-2
N-Channel MOSFET
Symbol
VDS
VGS
ID
ID
PD
Value
40
±20
0.18
0.36
150
Units
V
V
A
A
mW
Typical Characteristics
1.0
0.8 VGS=6.0V
0.6
VGS=4.5V
0.4
0.2 VGS=3.5V
1.0
0.8
0.6
0.4
0.2
T=25°C
T=55°C
T=125°C
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain Source Voltage (V)
Fig 1. Output Characteristics
3.5 4.0
6
5 VGS=3.0V
4
3 VGS=7.0V
0
0.0
80
0.5 1.0 1.5 2.0 2.5
VGS – Gate to Source Voltage (V)
Fig 2. Transfer Characteristics
Ciss
60
40
3.0
2
1
0.0
0
Rev.06
VGS=11.5V
0.2 0.4 0.6 0.8 1.0
ID – Drain Current (A)
Fig 3. On-Resistance vs. Drain Current
2
20
COss
CRss
0
0
4
8 12 16 20
VDS – Drain Source Voltage (V)
Fig 4. Capacitance
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