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AP3402GEH 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Advanced Power Electronics 로고
Advanced Power Electronics
AP3402GEH 데이터시트, 핀배열, 회로
Advanced Power
Electronics Corp.
AP3402GEH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
35V
18mΩ
38A
GD
S
TO-252(H)
G
DS
TO-251(J)
Rating
35
±20
38
24
110
34.7
0.27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.6
110
Units
/W
/W
Data and specifications subject to change without notice
Downloaded from Elcodis.com electronic components distributor
200420052-1/4


AP3402GEH 데이터시트, 핀배열, 회로
AP3402GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=25A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=25A
VDS=25V
VGS=4.5V
VDS=15V
ID=25A
RG=3.3Ω,VGS=10V
RD=0.6Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 -
-V
- 0.03 - V/
- - 18 mΩ
- - 32 mΩ
1 - 3V
- 22 -
S
- - 1 uA
- - 25 uA
- - ±30 uA
- 10.5 17 nC
- 4 - nC
- 6 - nC
- 9 - ns
- 78 - ns
- 19 - ns
- 4 - ns
- 950 1520 pF
- 160 - pF
- 110 - pF
- 2.5 3.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=25A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 22 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
Downloaded from Elcodis.com electronic components distributor
2/4




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AP3402GEH mosfet

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