AP02N90J 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 Advanced Power Electronics |
Advanced Power
Electronics Corp.
AP02N90H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristics
D
Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
900V
7.2
1.9A
G DS
TO-252(H)
The TO-252 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for low-
profile applications.
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
900
±30
1.9
1.2
6
62.5
0.5
36
1.9
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
2.0
110
Units
/W
/W
Data & specifications subject to change without notice
200418063-1/4
AP02N90H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
VDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25 , ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.85A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
VDS=10V, ID=1.9A
VDS=900V, VGS=0V
VDS=720V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=±30V
ID=1.9A
Gate-Source Charge
VDS=540V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=450V
Rise Time
ID=1.9A
Turn-off Delay Time
RG=10 VGS=10V
Fall Time
RD=236
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
900 -
- 0.8
-V
- V/
- - 7.2
2 - 4V
-2-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 12 20 nC
- 2.5 - nC
- 4.7 - nC
- 10 - ns
-5
- ns
- 18 - ns
- 9 - ns
- 630 1000 pF
- 40 - pF
- 4 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=1.9A, VGS=0V
IS=1.9A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 360 - ns
- 1.8 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=20mH , RG=25
3.Pulse width <300us , duty cycle <2%.
, IAS=1.9A.
2/4
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AP02N90J mosfet
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