(PDF) AP01N40G-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP01N40G-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP01N40G-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge ▼ 100% Avalanche Test ▼ Fast Switching Performance ▼ Simple Drive Requirement G D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID D 400V 16Ω 0.2A S SOT-89 D G Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 +20 0.2 0.14 0.8 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data & specifications subject to change without notice Value 100 Units ℃/W 1 201005191 1 page

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PDF AP01N40G-HF Data sheet ( Hoja de datos )