(PDF) AP02N40K-HF Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP02N40K-HF
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP02N40K-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D BVDSS 400V ▼ Fast Switching Characteristic RDS(ON) 5.5Ω ▼ Simple Drive Requirement G ID ▼ RoHS Compliant & Halogen-Free S 0.45A Description AP02N40 uses rugged design with the best combination of fast switching and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. D SOT-223 S D G Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V ID@TA=70℃ IDM PD@TA=25℃ EAS TSTG TJ Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Single Pulse Avalanche Energy2 Storage Temperature Range Operating Junction Temperature Range Rating 400 +30 0.45 0.35 1.8 2.7 0.5 -55 to 150 -55 to 150 Units V V A A A W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient4 Data & specifications subject to change without notice Value 45 Unit ℃/W 1 201004301 1 page

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PDF AP02N40K-HF Data sheet ( Hoja de datos )