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PDF TK10J80E Data sheet ( Hoja de datos )
| Número de pieza | TK10J80E | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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MOSFETs Silicon N-Channel MOS (π-MOS)
TK10J80E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK10J80E
1: Gate
2: Drain (Heatsink)
3: Source
TO-3P(N)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
TOR
800
±30
10
30
250
454
10
10
30
150
-55 to 150
0.8
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-10-26
Rev.3.0
1 page  
8. Characteristics Curves (Note)
TK10J80E
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
5 2013-10-26
Rev.3.0
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TK10J80E.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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