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MOSFETs



Toshiba Semiconductor 로고
Toshiba Semiconductor
TK10A80E 데이터시트, 핀배열, 회로
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10A80E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.7 (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK10A80E
TO-220SIS
1: Gate
2: Drain
3: Source
Start of commercial production
2013-10
1 2014-03-04
Rev.3.0


TK10A80E 데이터시트, 핀배열, 회로
TK10A80E
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
800
±30
10
30
50
454
10
10
30
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25(initial), L = 8.3 mH, RG = 25 , IAR = 10 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max Unit
2.5 /W
62.5 /W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-03-04
Rev.3.0




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TK10A80E mosfet

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