|
Advanced Power Electronics |
DATASHEET
SS-AP40N03H,J
N-CHANNEL POWER MOSFET
Silicon Standard Corp.
1250 Bayhill Drive, Suite 200
San Bruno, CA 94066
www.siliconstandard.com
Tel : 1-650-558-9689
Fax: 1-650-558-1889
Technical Partner : Advanced Power Electronics Corp.
Apr. 4, 2002
Rev. 0.1
SS-AP40N03H/J
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOS FET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40N03J) are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
21mΩ
36A
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
± 20
36
25
150
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
2.5
110
Unit
℃/W
℃/W
Data & specifications subject to change without notice.
|