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ON Semiconductor |
NTD5805N, NVD5805N
Power MOSFET
40 V, 51 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• LED Backlight Driver
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
Continuous Drain
(CNuortreen1t)(RqJC)
Power Dissipation
(RqJC) (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
40
"20
"30
51
36
47
85
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
IS 30 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.1 mH, VDS = 40 V)
EAS
80 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
RqJC
3.2 °C/W
Junction−to−Ambient − Steady State (Note 1) RqJA
107
1. Surface−mounted on FR4 board using the minimum recommended pad size.
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V(BR)DSS
40 V
RDS(on) MAX
16 mW @ 5.0 V
9.5 mW @ 10 V
D
ID MAX
51 A
G
S
N−CHANNEL MOSFET
4
12
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5805N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 4
1
Publication Order Number:
NTD5805N/D
NTD5805N, NVD5805N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VVDGSS
=
=
0 V,
40 V
TJ = 25°C
TJ = 150°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCES
VGS = 10 V, ID = 15 A
VGS = 5.0 V, ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 10 V, VDS = 32 V,
ID = 30 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 32 V,
ID = 30 A, RG = 2.5 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 150°C
tRR
ta
tb
VGS
=
0
V, dIs/dt
IS = 30
=
A
100
A/ms,
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ Max Unit
V
40.8 mV/°C
1.0
100
±100
mA
nA
3.5 V
7.04 mV/°C
7.6 9.5 mW
10.9 16
8.54 S
1725
pF
220
160
33 80 nC
2.0
7.2
9.8
10.2 ns
17.9
22.9
4.5
0.83 1.2
V
0.65
24.8 ns
14.6
10.2
15.5 nC
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