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PDF NVD5802N Data sheet ( Hoja de datos )
| Número de pieza | NVD5802N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD5802N, NVD5802N
Power MOSFET
40 V, Single N−Channel, 101 A DPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• MSL 1/260°C
• AEC Q101 Qualified
• 100% Avalanche Tested
• AEC Q101 Qualified − NVD5802N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Motor Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent (RqJC) (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
(RqJC) (Note 1)
Continuous Drain Cur-
rent (RqJA) (Note 1)
Steady
State
TC = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxPkg
TJ, Tstg
40
"20
101
78
93.75
16.4
12.7
2.5
300
45
−55 to
175
V
V
A
W
A
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
50 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche En-
ergy (VDD = 32 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 40 A, RG = 25 W)
EAS
240 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
40 V
RDS(on)
4.4 mW @ 10 V
7.8 mW @ 5.0 V
D
ID
101 A
50 A
N−Channel
G
S
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
5802N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 6
1
Publication Order Number:
NTD5802N/D
1 page  
NTD5802N, NVD5802N
TYPICAL PERFORMANCE CHARACTERISTICS
8000
7000
6000
Ciss
VGS = 0 V
TJ = 25°C
5000
4000
3000
2000
Coss
1000
0 Crss
10 5 0 5 10 15 20 25 30 35
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
40
15
12
9 VDS
6
QGS
3
QT
QDS
ID = 50 A
TJ = 25°C
VGS
0
0 20 40 60
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
24
18
12
6
0
80
1000
VDD = 20 V
ID = 50 A
VGS = 10 V
100
10
tf
td(off)
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
60
VGS = 0 V
50 TJ = 25°C
40
30
20
10
0
0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100 10 ms
100 ms
10
VGS = 10 V
Single Pulse
1 TC = 25°C
RDS(on) Limit
Thermal Limit
0.1
0.1
Package Limit
1
10
1 ms
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NVD5802N.PDF ] | |
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