|
Harris |
Semiconductor
September 1998
RFH25P08, RFH25P10,
RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm,
P-Channel Power MOSFETs
[ /Title
(RFH25
P08,
RFH25P
10,
RFK25P
08,
RFK25P
10)
/Subject
(-25A, -
100V, -
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words (-
25A, -
100V a-
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• -25A, -100V and -80V
• rDS(ON) = 0.150Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH25P08
TO-218AC
RFH25P08
RFH25P10
TO-218AC
RFH25P10
RFK25P08
TO-204AE
RFK25P08
RFK25P10
TO-204AE
RFK25P10
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO -218AC
DRAIN
SOURCE
DRAIN
GATE
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA49230.
Symbol
D
G
S
JEDEC TO-204AE
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
6-1
File Number 1632.1
RFH25P08, RFH25P10, RFK25P08, RFK25P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFH25P08
RFK25P08
RFH25P10
RFK25P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . Tpkg
-80
-80
-25
-60
±20
150
1.2
-55 to 150
300
260
-100
-100
-25
-60
±20
150
1.2
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFH25P08, RFK25P08
BVDSS ID = 250µA, VGS = 0V
RFH25P10, RFK25P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
rDS(ON)
Drain to Source On Voltage (Note 2)
VDS(ON)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Input Capacitance
CISS
Output Capacitance
COSS
Reverse-Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
RθJC
Source to Drain Diode Specifications
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0
VDS = 0.8 x Rated BVDSS, VGS = 0,
TC = 125oC
VGS = ±20V, VDS = 0V
ID = 25A, VGS = -10V, (Figures 6, 7)
ID = -25A, VGS = -10V
ID ≈ 12.5A, VDS = -50V, RGS = 50Ω,
VGS = -10V, RL = 4.0Ω
(Figures 10, 11, 12)
VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)
RFK25P08, RFK25P10
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -12.5A
Diode Reverse Recovery Time
trr ISD = -4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
-
35
165
270
165
-
-
-
-
TYP
-
300
MAX UNITS
-V
-V
-4 V
-1 µA
-25 µA
±100
0.150
-3.75
50
250
400
250
3000
1500
600
0.83
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
oC/W
MAX UNITS
-1.4 V
- ns
6-2
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