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MOSFETs



Toshiba Semiconductor 로고
Toshiba Semiconductor
TJ30S06M3L 데이터시트, 핀배열, 회로
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ30S06M3L
1. Applications
• Automotive
• Motor Drivers
• DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 16.8 m(typ.) (VGS = -10 V)
(3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)
(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TJ30S06M3L
DPAK+
1: Gate
2: Drain (heatsink)
3: Source
Start of commercial production
2011-03
1 2014-08-04
Rev.6.0


TJ30S06M3L 데이터시트, 핀배열, 회로
TJ30S06M3L
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -60 V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-30 A
Drain current (pulsed)
(Note 1)
IDP
-60
Power dissipation
(Tc = 25)
PD 68 W
Single-pulse avalanche energy
(Note 2)
EAS
71 mJ
Avalanche current
IAR -30 A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol Max Unit
Channel-to-case thermal resistance
Rth(ch-c)
2.2 /W
Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = -25 V, Tch = 25(initial), L = 107 µH, RG = 25 , IAR = -30 A
Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2 2014-08-04
Rev.6.0




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TJ30S06M3L mosfet

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